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This Blog provides Datasheets and information for electronic components and semiconductors(Datasheet PDF Search)

Posted
Filed under Diodes Incorporated

This Part Name is A1837.

This is Semiconductor.

This product has 2SA1837 functions.

Manufacturers of the product is Toshiba Semiconductor

Image and pinout :

A1837 datasheet pinout


Some of the text files within the PDF file :


TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −230 −230 −5 −1 −0.1 2.0 20 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE fT C [ ... ]

 

A1837 PDF Datasheet File


 
2017/06/26 20:59 2017/06/26 20:59

Posted
Filed under Diodes Incorporated

This Part Name is A1767.

This is Semiconductor.

This product has 2SA1767 functions.

Manufacturers of the product is Panasonic

Image and pinout :

A1767 datasheet pinout


Some of the text files within the PDF file :


Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A ■ Features • High collector-emitter voltage (Base open) VCEO 0.7±0.1 0.7±0.2 Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −300 −300 −5 −70 −100 750 150 −55 to +150 Unit V V V 2.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 12.9±0.5 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.5+0.6 –0.2 0.45+0.15 –0.1 mA mA mW °C °C 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation volta [ ... ]

 

A1767 PDF Datasheet File


 
2017/06/26 20:58 2017/06/26 20:58

Posted
Filed under Diodes Incorporated

This Part Name is A1516.

This is Semiconductor.

This product has SILICON PNP TRANSISTOR functions.

Manufacturers of the product is ISC

Image and pinout :

A1516 datasheet pinout


Some of the text files within the PDF file :


· Collector-Emitter Breakdown Voltage-: V(BR)CEO= -180V(Min)

· Good Linearity of hFE
· Complement to Type 2SC3907
APPLICATIONS

· Power amplifier applications
· Recommend for 80W high fidelity audio frequency amplifier output stage applications [ ... ]

 

A1516 PDF Datasheet File


 
2017/06/26 20:58 2017/06/26 20:58

Posted
Filed under Diodes Incorporated

This Part Name is A1300.

This is Semiconductor.

This product has 2SA1300 functions.

Manufacturers of the product is Toshiba Semiconductor

Image and pinout :

A1300 datasheet pinout


Some of the text files within the PDF file :


TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) · Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg -20 -20 -10 -6 -2 -5 -0.2 750 150 -55~150 Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Unit V V V A A mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut- [ ... ]

 

A1300 PDF Datasheet File


 
2017/06/23 20:07 2017/06/23 20:07

Posted
Filed under Diodes Incorporated

This Part Name is 9A103G.

This is Semiconductor.

This product has Thick Film Resistor Networks functions.

Manufacturers of the product is Cinetech Industrial

Image and pinout :

9A103G datasheet pinout


Some of the text files within the PDF file :


Thick film resistor networks have metal glaze elements on the ceramic substrates with strong clip-construction terminals, and are coated with special epoxy resin.
They are originally designed, as a style of in line package, and are the most suitable to meet the density of circuit assembling. [ ... ]

 

9A103G PDF Datasheet File


 
2017/06/23 20:06 2017/06/23 20:06

Posted
Filed under Diodes Incorporated

This Part Name is 9956B.

This is Semiconductor.

This product has 52 mm Diameter functions.

Manufacturers of the product is Electron Tubes

Image and pinout :

9956B datasheet pinout


Some of the text files within the PDF file :


These photomultipliers have low background windows.
Quartz (fused silica) windows are also avaiable as an option. Most are available in hard pin, flying lead with temporary B14A cap or permanent B14A cap options

9956B
This photomultiplier is an earlier type for scintillation counting. [ ... ]

 

9956B PDF Datasheet File


 
2017/06/23 20:03 2017/06/23 20:03

Posted
Filed under Diodes Incorporated

This Part Name is 9926B.

This is Semiconductor.

This product has Dual N-Channel MOSFET functions.

Manufacturers of the product is Tuofeng Semiconductor

Image and pinout :

9926B datasheet pinout


Some of the text files within the PDF file :


Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Symbol VDS VGS ID IDM PD 10 secs Steady Sate 20 10 6.5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 10 sec Steady State Steady State * Surface Mounted on 1" X 1"FR4 Board. Symbol RthJA RthJF Typ 50 80 30 Max Unit 62.5 100 /W 40 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET 9926B Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Testconditons VDSS VGS = 0 V, ID = 250 A IDSS VDS =16V , VGS = 0V Min Typ Max Unit 20 V 1 uA G [ ... ]

 

9926B PDF Datasheet File


 
2017/06/23 19:59 2017/06/23 19:59

Posted
Filed under Diodes Incorporated

This Part Name is 8N60C.

This is Semiconductor.

This product has FQB8N60C functions.

Manufacturers of the product is Fairchild Semiconductor

Image and pinout :

8N60C datasheet pinout


Some of the text files within the PDF file :


www.DataSheet.co.kr FQB8N60C / FQI8N60C QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25° [ ... ]

 

8N60C PDF Datasheet File


 
2017/06/23 19:58 2017/06/23 19:58

Posted
Filed under Diodes Incorporated

This Part Name is 8N50NZ.

This is Semiconductor.

This product has N-Channel MOSFET functions.

Manufacturers of the product is Fairchild Semiconductor

Image and pinout :

8N50NZ datasheet pinout


Some of the text files within the PDF file :


FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m October 2013 Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correcti [ ... ]

 

8N50NZ PDF Datasheet File


 
2017/06/23 19:58 2017/06/23 19:58

Posted
Filed under Diodes Incorporated

This Part Name is 88N30W-HF-3.

This is Semiconductor.

This product has AP88N30W-HF-3 functions.

Manufacturers of the product is Advanced Power Electronics

Image and pinout :

88N30W-HF-3 datasheet pinout


Some of the text files within the PDF file :


Advanced Power Electronics Corp. AP88N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance Simple Drive Requirement Fast Switching Characteristics G S D BV DSS R DS(ON) ID 300V 48mΩ 48A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP88N30W-HF-3 is in the TO-3P through-hole package which is widely used in higher power commercial and industrial applications where an attached heatsink is required. This device is well suited for use in applications such as motor drives, inverteers and DC/DC converters. D (tab) G D S TO-3P (W) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C IDM IDR IDR(PULSE) PD at TC=25°C IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Rating 300 ± 30 48 160 48 1 Units V A A A A W W/°C A mJ °C °C Body-Drain Diode Reverse Drain Current Body-Drain Diode Rever [ ... ]

 

88N30W-HF-3 PDF Datasheet File


 
2017/06/23 19:57 2017/06/23 19:57