DataSheet-PDF.info

This Part Name is BF194.

This is Semiconductor.

This product has TRANZYSTORY functions.

Manufacturers of the product is ETC

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NPN Transistor

Vcbo =30V, Vceo=20V, Vebo=4V, Ic=30mA, Ptot=160mW

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BF194 PDF Datasheet File

 

This Part Name is BEL187.

This is Transistor. The package is TO92 type.

This product has Vceo=15V, Vcbo=25V, Vebo=5V, Ic=300mA functions.

Manufacturers of the product is Bharat Electronics

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 NPN low voltage output transistor, Vceo=15V, Vcbo=25V, Vebo=5V, Ic=300mA 

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BEL187 PDF Datasheet File

 

This Part Name is BD9275F.

This is Semiconductor.

This product has Silicon Monolithic Integrated Circuit functions.

Manufacturers of the product is Rohm

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Features

・Using 20V process / 1ch control with Push-Pull
・Accuracy of drive output frequency：3.5%（IC Only/Built-in CT Capacitor）
・High accuracy timer latch current(±15%)
・Built-in FAIL function
・Adjustable latch timing
・Adjustable slow start time
・Lamp current and voltage sense feedback control
・Mode-selectable the operating or stand-by mode by STB pin (Typ.=0uA )

1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE FUNCTION ＢＤ９２７５Ｆ ・Using 20V process / 1ch control with Push-Pull ・Accuracy of drive output frequency：3.5%（IC Only/Built-in CT Capacitor） ・High accuracy timer latch current(±15%) ・Built-in FAIL function ・Adjustable latch timing ・Adjustable slow start time ・Lamp current and voltage sense feedback control ・Mode-selectable the operating or stand-by mode by STB pin (Typ.=0uA ) ○Absolute Maximum Ratings（Ta = 25℃） Parameter Supply Voltage OUTPUT PIN Voltage Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation *1 Symbol VCC N1, N2 Topr Tstg Tjmax Pd Limits 20 20 -40～+85 -55～+150 +150 SOP18:562* Unit V V ℃ ℃ ℃ mW Pd derate at -4.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm) 〇動作範囲 項目 Supply voltage Input Frequency Ratio PWM_IN PIN [ ... ]

 

 

BD9275F PDF Datasheet File

 

This Part Name is BD512.

This is Semiconductor. The package is TO-202 type.

This product has P-Channel Power VMOS Transistor functions.

Manufacturers of the product is ETC

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Enhancement Mode P-Channel Power VMOS Transistor for applications needing high input impedance and fast switching times.

Features

1. High input impedance

2. High speed switching

3. No minority carrier storage time

4. CMOS logic compatible input

Pinout 

1. Source    2. Drain  3. Gate

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BD512 PDF Datasheet File

 

This Part Name is BD137.

This is Semiconductor. The package is TO-126 type.

This product has NPN power transistors functions.

Manufacturers of the product is NXP

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BD137 PDF Datasheet File

 

This Part Name is BC547.

This is Semiconductor. The package is TO-92 type.

This product has NPN Epitaxial Silicon Transistor functions.

Manufacturers of the product is Fairchild Semiconductor

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• Complement to BC556, BC557, BC558, BC559, and BC560

 

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BC547 PDF Datasheet File

 

This Part Name is BC148.

This is Semiconductor.

This product has TRANZYSTORY NPN functions.

Manufacturers of the product is ETC

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BC148 PDF Datasheet File

 

This Part Name is BB112.

This is Semiconductor.

This product has Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) functions.

Manufacturers of the product is Siemens Group

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BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 … 8.0 V Type BB 112 Marking – Ordering Code Pin Configuration Q62702-B240 Package1) TO-92 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Symbol VR IF Top Values 12 50 – 55 … + 85 Unit V mA ˚C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 112 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance VR = 1 V, f = 0.5 MHz Q factor VR = 1 V, f = 0.5 MHz Temperature coefficient of diode capacitance VR = 1 V, f = 1 MHz Capacitance matching VR = 1 … 8 V Symbol min. IR – – CT 440 17.5 CT1 CT8 rs Q TCC 15 – – – 470 – – 1.4 480 500 520 34 – – – – – Ω – ppm/K – – 50 200 pF V [ ... ]

 

 

BB112 PDF Datasheet File

 

This Part Name is B511.

This is PNP Transistor. The package is TO-220 type.

This product has Vcbo = -35V functions.

Manufacturers of the product is SavantIC

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power amplifier applications

 

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B511 PDF Datasheet File

 

This Part Name is B1412, 2SB1412.

This is Low frequency transistor .

This product has (-20V, -5A) PNP Transistor functions.

Manufacturers of the product is Rohm

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Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −30 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Collector power dissipation 2SB1412 PC 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10ms Unit V V V A(DC) A(Pulse) ∗1 W W(Tc=25°C) °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emi [ ... ]

 

 

B1412 PDF Datasheet File