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This Blog provides Datasheets and information for electronic components and semiconductors.

Posted       Datasheet

This Part Name is ULN2813.

This is Semiconductor.

This product has (ULN2xxx) Darlington Transistor Arrays functions.

Manufacturers of the product is Integrated Power Semiconductors

Image and pinout :

ULN2813 datasheet pinout


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ULN2813 PDF Datasheet File


 
2017/10/18 09:05 2017/10/18 09:05

Posted       Datasheet

This Part Name is TDA1552Q.

This is Semiconductor.

This product has 2 x 22 W BTL stereo car radio power amplifier functions.

Manufacturers of the product is NXP

Image and pinout :

TDA1552Q datasheet pinout


INTEGRATED CIRCUITS DATA SHEET TDA1552Q 2 x 22 W BTL stereo car radio power amplifier Product specification File under Integrated Circuits, IC01 July 1994 Philips Semiconductors Product specification 2 x 22 W BTL stereo car radio power amplifier GENERAL DESCRIPTION TDA1552Q The TDA1552Q is an integrated class-B output amplifier in a 13-lead single-in-line (SIL) plastic power package. The circuit contains 2 x 22 W amplifiers in Bridge Tied Load (BTL) configuration. The device is primarily developed for car radio applications. Features • Requires very few external components • High output power • Low offset voltage at outputs • Fixed gain • Good ripple rejection • Mute/stand-by switch • Load dump protection • AC and DC short-circuit-safe to ground and VP QUICK REFERENCE DATA PARAMETER Supply voltage range operating non-operating load dump protected Repetitive peak output current Total quiescent current Stand-by current Switch-on current Input impedance Junction [ ... ]

 

TDA1552Q PDF Datasheet File


 
2017/10/18 09:05 2017/10/18 09:05

Posted       Datasheet

This Part Name is SSP7N60B.

This is Semiconductor.

This product has 600V N-Channel MOSFET functions.

Manufacturers of the product is Fairchild Semiconductor

Image and pinout :

SSP7N60B datasheet pinout


SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC [ ... ]

 

SSP7N60B PDF Datasheet File


 
2017/10/18 09:03 2017/10/18 09:03

Posted       Datasheet

This Part Name is RT5370N.

This is Semiconductor.

This product has highly integrated MAC/BBP and 2.4 GHz RF/PA/LNA single chip functions.

Manufacturers of the product is Ralink

Image and pinout :

RT5370N datasheet pinout


IIIIIII Application •IEEE802.11 b/g/n Wireless Local Area Networks •USB 2.0 Wi-Fi Dongle. RT5370 Datasheet Revision August 30, 2010 Product Description The RT5370 is a highly integrated MAC/BBP and 2.4 GHz RF/PA/LNA single chip with 150Mbps PHY rate supporting. It fully complies with IEEE 802.11n and IEEE 802.11 b/g feature rich wireless connectivity at high standards, delivers reliable, cost-effective, throughput from an extended distance. Optimized RF architecture and baseband algorithms provide superb performance and low power consumption. Intelligent MAC design deploys a high efficient DMA engine and hardware data processing accelerators without overloading the host processor. The RT5370 is designed to support standard based features in the areas of security, quality of service and international regulation, giving end users the greatest performance anytime in any circumstance. Features  CMOS Technology with PA, LNA, RF, Baseband, and MAC Integrated.  1T1R Mode with 150M [ ... ]

 

RT5370N PDF Datasheet File


 
2017/10/18 09:02 2017/10/18 09:02

Posted       Datasheet

This Part Name is 2MBI200U2A-060-50.

This is Semiconductor.

This product has Power Devices (IGBT) functions.

Manufacturers of the product is ETC

Image and pinout :

2MBI200U2A-060-50 datasheet pinout


6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics · Improved noise-loss trade-off · Reduced turn-on dv/dt, excellent turn-on dic/dt Turn-off switching characteristic · Soft switching behavior, turn-off oscillation free 125 600V-100A (chip level) V-IGBT Von=1.90V 25°C 25°C 100 Collector Current [A] http:/// 125°C 75 125°C U-IGBT Von=2.00V 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 On-state voltage drop [V] U,U4 series 1200V 25A 35A 50A 75A 100A 150A Legacy Pin Layout New Pin Layout Solderless EP3 EP2 V series M/P N/R EP2XT EP3XT EP3XT EP3XT A EP2XT B W/Y EP2XT X/Z M/N/W/X In/Out Pin Layout P/R/Y/Z Power Flow REC INV INPUT R Power Flow REC INV S W T R S T INPUT U V OUTPUT OUTPUT U V W 2 datasheet pdf - ht [ ... ]

 

2MBI200U2A-060-50 PDF Datasheet File


 
2017/10/18 08:54 2017/10/18 08:54

Posted       Datasheet

This Part Name is 1N60P.

This is Semiconductor.

This product has Diode 45V 0.15A 2-Pin DO-7 functions.

Manufacturers of the product is New Jersey Semiconductor

Image and pinout :

1N60P datasheet pinout


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1N60P PDF Datasheet File


 
2017/10/18 08:53 2017/10/18 08:53

Posted       Datasheet

This Part Name is 1N60P.

This is Semiconductor.

This product has Schottky Barrier Diode functions.

Manufacturers of the product is Formosa MS

Image and pinout :

1N60P datasheet pinout


FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25 Parameter Repetitive peak reverse voltage Peak forward surge current Forward continuous current Storage temperature range tp 1 s Ta=25 Test Conditions Type 1N60 1N60P 1N60 1N60P 1N60 1N60P Symbol VRRM VRRM IFSM IFSM IF IF Tstg Value 40 45 150 500 30 50 -65~+125 Unit V V mA mA mA mA Maximum Thermal Resistance Tj=25 Parameter Junction ambient Test Conditions on PC board 50mm 50mm 1.6mm Symbol RthJA Value 250 Unit K/W Formosa MicroSemi CO., LTD. www.formosams.com Rev. 2, 22-Nov-2002 1/2 FMS 1N60/1N60P Electrical Characteristics Tj=25 Parameter Forward voltage Test Conditions IF=1mA IF=30mA IF=200mA Reverse current Junction capacitance Reverse recovery time VR=15V VR=1V, f=1MHz VR=10V, f=1MHz IF=IR=1mA Irr=1mA RC=100Ω Type 1N60 1N60P 1 [ ... ]

 

1N60P PDF Datasheet File


 
2017/10/18 08:53 2017/10/18 08:53

Posted       Datasheet

This Part Name is 1N60P.

This is Semiconductor.

This product has POINT CONTACT GERMANIUM DIODE functions.

Manufacturers of the product is Semtech Corporation

Image and pinout :

1N60P datasheet pinout


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1N60P PDF Datasheet File


 
2017/10/18 08:53 2017/10/18 08:53

Posted       Datasheet

This Part Name is 1200P100.

This is Semiconductor.

This product has NCP1200P100 functions.

Manufacturers of the product is ON Semiconductor

Image and pinout :

1200P100 datasheet pinout


NCP1200 PWM Current−Mode Controller for Low−Power Universal Off−Line Supplies Housed in SO−8 or DIP−8 package, the NCP1200 represents a major leap toward ultra−compact Switch−Mode Power Supplies. Thanks to a novel concept, the circuit allows the implementation of a complete offline battery charger or a standby SMPS with few external components. Furthermore, an integrated output short−circuit protection lets the designer build an extremely low−cost AC/DC wall adapter associated with a simplified feedback scheme. With an internal structure operating at a fixed 40 kHz, 60 kHz or 100 kHz, the controller drives low gate−charge switching devices like an IGBT or a MOSFET thus requiring a very small operating power. Thanks to current−mode control, the NCP1200 drastically simplifies the design of reliable and cheap offline converters with extremely low acoustic generation and inherent pulse−by−pulse control. When the current setpoint falls below a [ ... ]

 

1200P100 PDF Datasheet File


 
2017/10/18 08:52 2017/10/18 08:52

Posted       Datasheet

This Part Name is ULN2824LW.

This is Semiconductor.

This product has HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS functions.

Manufacturers of the product is Allegro MicroSystems

Image and pinout :

ULN2824LW datasheet pinout


2803 THRU 2824 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 Featuring continuous load current ratings to 500 mA for each of the drivers, the Series ULN28xxA/LW and ULQ28xxA/LW highvoltage, high-current Darlington arrays are ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads. Typical power loads totaling over 260 W (350 mA x 8, 95 V) can be controlled at an appropriate duty cycle depending on ambient temperature and number of drivers turned on simultaneously. Typical loads include relays, solenoids, stepping motors, magnetic print hammers, multiplexed LED and incandescent displays, and heaters. All devices feature open-collector outputs with integral clamp diodes. The ULx2803A, ULx2803LW, ULx2823A, and ULN2823LW have series input resistors selected for operation directly with 5 V TTL or CMOS. These devices will handle numerous interface needs — particularly those beyond the capabilities of [ ... ]

 

ULN2824LW PDF Datasheet File


 
2017/10/18 08:52 2017/10/18 08:52