This Part Name is FTW20N50A.
This is Semiconductor.
This product has N-Channel MOSFET functions.
Manufacturers of the product is IPS
Image and pinout :
Some of the text files within the PDF file :
FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.. Features˖ z Fast Switching z Low ON Resistance(RdsoQİ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche energy Test Applications˖ Power switch circuit of electron ballast and adaptor. Absolute˄Tc= 25ć unless otherwise specified˅˖ VDSS ID PD (TC=25ć) RDS(ON) TO–3P(N) 500 20 230 0.26 V A W Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJˈTstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source [ ... ]