Part Number : 2SC1969
Function : NPN Epitaxial Planar Type Transistor
Package : TO-220 Type
Maker : MITSUBISHI ELECTRIC
Image :
Description :
The 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.
Absolute maximum ratings ( Tc=25°C )
1. Collector to Base Voltage : Vcbo = 60 V
2. Collector to Emitter Voltage : Vceo = 25 V
3. Emitter to Base Voltage : Vebo = 5 V
4. Collector Current : Ic = 6 A
5. Total Dissipation : Pc = 20 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
Pinouts :
Applications :
10 To 14 Watts output power class AB amplifiers applications in HF band.
Datasheet PDF Download :
Others datasheet of same file : C1969