Part Number : 2SC1969

Function : NPN Epitaxial Planar Type Transistor

Package : TO-220 Type

Maker : MITSUBISHI ELECTRIC

Image : 


Description :

The 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

Absolute maximum ratings ( Tc=25°C )

1. Collector to Base Voltage : Vcbo = 60 V

2. Collector to Emitter Voltage : Vceo = 25 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 6 A

5. Total Dissipation : Pc = 20 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C


Pinouts :
2SC1969 datasheet

Applications : 

10 To 14 Watts output power class AB amplifiers applications in HF band.

Datasheet PDF Download :
2SC1969 pdf

Others datasheet of same file : C1969
2021/08/25 09:34 2021/08/25 09:34

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