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Filed under Toshiba

Part Number : 30F121, GT30F121 

Function : 300V 120A IGBT, TO-220SIS

Maker : Toshiba

Plasma Display

Previously, MOSFETs were used for the power supplies of plasma display panels (PDPs). Recently, however, MOSFETs are being replaced by IGBTs, which have lower VCE(sat)in a large current area.

Pinouts :

30F121 Pinout

30F121 datasheet 

IGBT: Insulated Gate Bipolar Transistor

●  IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.
●  The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.
●  Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the

Datasheet PDF Download :

Others datasheet of same file : GT35F131, GT30F122, 35F131, 30F122
2015/11/25 16:14 2015/11/25 16:14