Part Number : 30F121, GT30F121
Function : 300V 120A IGBT, TO-220SIS
Maker : Toshiba
Previously, MOSFETs were used for the power supplies of plasma display panels (PDPs). Recently, however, MOSFETs are being replaced by IGBTs, which have lower VCE(sat)in a large current area.
IGBT: Insulated Gate Bipolar Transistor
● IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.
● The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.
● Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the
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Others datasheet of same file : GT35F131, GT30F122, 35F131, 30F122