Part Number : 30F124, GT30F124

Function : Discrete IGBT / 300V, 200A, Transistor

Package : TO-220SIS Type

Maker : Toshiba

Image :
30F124 datasheet

Description :

30F124  300V IGBT,

Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.

On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation.

 

 

 

Applications and Features : Plasma display panels

Reference PDF : http://www.semicon.toshiba.co.jp/download/docs_pdf/SCE0004-08_catalog.pdf

Reference PDF : http://www.semicon.toshiba.co.jp/download/docs_pdf/BCE0010_catalog.pdf

Others datasheet of same file : 3OF124, GT30F124, GT3OF124

Datasheet PDF Download :
30F124 pdf


2021/09/29 16:22 2021/09/29 16:22

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