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Part Number : IRF510

Function : N-channel power MOSFET, 100V, 5.6A

Maker : Harris Semiconductor

Pinouts :
IRF510 datasheet

Description :

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

IRF510 Datasheet PDF Download

IRF510 pdf

Others datasheet of same file : IRF511, IRF512, IRF513
2016/02/28 03:00 2016/02/28 03:00