Function : N-channel power MOSFET, 100V, 5.6A
Maker : Harris Semiconductor
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
IRF510 Datasheet PDF Download
Others datasheet of same file : IRF511, IRF512, IRF513