Part Number : IRFD1Z0
Function : 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFET
Package : HEXDIP Type
Maker : Intersil
Pinouts :
Description :
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits. Formerly developmental type TA17451.
• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4W and 3.2W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Datasheet PDF Download : Others datasheet of same file : IRFD1ZO, IRFD1Z1, IRFD1Z2, IRFD1Z3