Part Number : K10A60D

Function : 600V, Field Effect Transistor Silicon N Channel MOSFET

Package : TO-220 Type

Maker : Toshiba

Image :
K10A60D datasheet

Description :

1. Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 10 A

4. Avalanche energy : Ear = 4.5 mJ

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications : Switching Regulator 

Datasheet PDF Download :
K10A60D pdf

Others datasheet of same file : K10A60, K10A600, TK10A60D
2021/11/19 09:48 2021/11/19 09:48

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