Part Number : K1358
Function : 900V, Field Effect Transistor
Package : TO-3P Type
Maker : Toshiba
Image :
Description :
Silicon N Channel MOS Type FET
Pinouts :
• Low Drain-Source ON Resistance : RDS(ON)= 1.1Ω(Typ.)
• High Forward Transfer Admittance : | Yfs | = 4.0S (Typ.)
• Low Leakage Current : IDSS= 300µA (Max.) @ VDS= 720V
• Enhancement-Mode : Vth= 1.5 ~ 3.5V @ VDS= 10V, ID= 1mA
Absolute Maximum Ratings
1. Drain-Source Voltage VDSS : 900 V
2. Drain-Gate Voltage (RGS= 20k Ohm ) : VDGR = 900 V
3. Gate-Source Voltage VGSS : ± 30 V
Applications :
1. High Speed, High Current DC-DC Converter
2. Relay Drive and Motor Drive
Datasheet PDF Download :
Others datasheet of same file : 2SK1358