Part Number : K2996
Function : 600V, 10A, MOSFET, Transistor
Package : TO-220 Type
Maker : Toshiba
Pinouts : 
Description :
Silicon N Channel MOSFET
Features :
1. Low drain−source ON resistance : RDS(ON) = 0.74 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 6.8 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 10 A
4. Drain Power Dissipation : Pc = 45 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
1. High Speed, High Voltage Switching
2. DC−DC Converter, Relay Drive and Motor Drive
Datasheet PDF Download : 
Others datasheet of same file : 2SK2996