Part Number : RJH30
Function : 360V, 30A, Silicon N Channel IGBT (Transistor)
Package : TO-220FL Type
Maker : Renesas Electronics
Image :
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. High speed switching: tr =80 ns typ., tf = 150 ns typ.
3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
4. High speed power switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 360 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 30 A
4. Channel dissipation : Pch = 20 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download :
Others datasheet of same file : RJH30H1DPP-M0