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RJH30E2

RJH30E2

 

 

RJH30E2 features:

(1) Trench gate and thin wafer technology (G6H-II series)

(2) High speed switching: tr =80 ns typ., tf = 150 ns typ.

(3) Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

(4) Low leak current: ICES = 1 mA max.

(5) Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

(6)Isolated package: TO-220FL.

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2015/01/28 13:52 2015/01/28 13:52