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Part Number : RJH60F5DPQ

Function : Silicon N Channel IGBT High Speed Power Switching

Maker : Renesas Electronics

Pinouts :
RJH60F5DPQ datasheet

Description :

600V / 40A / IGBT

 

1. Low collector to emitter saturation voltage
   VCE(sat)= 1.37 V typ. (IC= 40 A, VGE= 15 V, Ta = 25°C)
2.  Built in fast recovery diode in one package
3.  Trench gate and thin wafer technology
4.  High speed switching tr= 85 ns typ.

(at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)


RJH60F5DPQ Datasheet


RJH60F5DPQ pdf

Others datasheet of same file : RJH60F5, RJH60F5DPQ, RJH60F5DPQ-A0

2016/08/07 09:22 2016/08/07 09:22