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Part Number : RJP6065DPM

Function : Silicon N Channel IGBT High Speed Power Switching

Package : TO-3PFM Type


Maker : Renesas Electronics

 Image :
RJP6065DPM datasheet

Description :

1. Low collector to emitter saturation voltage
   VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)

2. Gate to emitter voltage rating 30 V

3.  Pb-free lead plating and chip bonding

Pinout


RJP6065DPM Datasheet PDF


RJP6065DPM pdf

Others datasheet of same file : RJP6065, RJP6065DPM

2016/07/22 14:50 2016/07/22 14:50