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Part Number : RJP63F3DPP-M0

Function : Silicon N Channel IGBT / High Speed Power Switching

Maker : Renesas Electronics

Pinouts :
RJP63F3DPP-M0 datasheet

Description :

1. Trench gate and thin wafer technology (G6H series)
 
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching tf = 100 ns typ

4. Low leak current  ICES= 1 μA max

5. Isolated package TO-220FL


RJP63F3DPP-M0 Datasheet


RJP63F3DPP-M0 pdf

Others datasheet of same file : RJP63F, RJP63F3, RJP63F3DPP-M0