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Part Number : RJP63K2DPP-M0

Function : Silicon N Channel IGBT High Speed Power Switching

Maker : Renesas Electronics

Pinouts :
RJP63K2DPP-M0 datasheet

Description :

1.  Trench gate and thin wafer technology (G6H-II series)
2.  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3.  High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4.  Low leak current: ICES= 1 A max
5.  Isolated package TO-220FL


RJP63K2DPP-M0 Datasheet


RJP63K2DPP-M0 pdf

Others datasheet of same file : RJP63K2, RJP63K2DPP-M0

2016/07/19 11:48 2016/07/19 11:48