Part Number : K1363
Function : 900V, 8A, N Channel MOS Type FET
Package : TO-3P type
Maker : Toshiba
Pinouts and Image: 
Description :
High Speed, High Current Switching Applications
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 900 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 8 A
4. Drain Power Dissipation : Pd = 90 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Datasheet PDF Download : 
Others datasheet of same file : 2SK1363